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    MBR1H100SFT3G, NRVB1H100SFT3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 100 V Average Rectified Forward Current (TL = 162 °C) IO 1.0 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ ?65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction?to?Lead (Note 2) JCL 23 °C/W Thermal Resistance, Junction?to?Ambient (Note 2) RJA 85 °C/W Thermal Resistance, Junction?to?Ambient (Note 3) RJA 330 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, T J = 25 °C) (IF = 2.0 A, T J = 25 °C) (IF = 1.0 A, T J = 125 °C) (IF = 2.0 A, T J = 125 °C) VF 0.76 0.84 0.61 0.68 V Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25 °C) (Rated dc Voltage, TJ = 125 °C) IR 40 0.5 A mA 2. Mounted with 700 mm2 copper pad size (Approximately 1 in 2) 1 oz FR4 Board. 2 copper, 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm 4. Pulse Test: Pulse Width ≤ 380 s, Duty Cycle ≤ 2.0%. |